Efficient and slurryless ultrasonic vibration assisted electrochemical mechanical polishing for 4H–SiC wafers
نویسندگان
چکیده
This paper proposes a slurryless, highly efficient polishing method called ultrasonic vibration assisted electrochemical mechanical (UAECMP) to realize 4H–SiC wafers with subnanometer surface roughness. UAECMP involves using simultaneously assist anodic oxidation of the SiC and removal generated oxide layer. The performance was evaluated by experiments theoretical analyses. For (0001) surface, achieved material rate (MRR) 14.54 ?m/h, which 4.5 times greater than that ordinary (ECMP) 290 polishing. Ultrasonic increased introducing local transient strain increasing temperatures area electrolyte. effect amplitude vibration. However, also roughness due large fluctuations marks caused grinding stone impact residual oxide. Therefore, we propose high-efficiency -quality process for combines ECMP. proposed may help simplify existing manufacturing wafers.
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ژورنال
عنوان ژورنال: Ceramics International
سال: 2022
ISSN: ['0272-8842', '1873-3956']
DOI: https://doi.org/10.1016/j.ceramint.2021.11.301